ToF-SIMS is a surface analytical method that provides chemically specific information about the upper 1-2 nm of a surface. The IONTOF TOF.SIMS 5 is capable of producing high mass resolution spectra (m/detlaM ~ 6000-10000) and high spatial resolution images (< 1 micron edge resolution) of any surface that can be placed in an ultra high vacuum environment. The TOF.SIMS 5 also has a gas cluster ion beam (GCIB) for sputtering which enables depth profiling of organic materials, perovskites, and some oxides.

ToF-SIMS Key Capabilities:
-Generation of detailed mass spectrum of the outermost 1-2 nm of a surface
-2D and 3D chemical imaging
-Identification of structural units present at the surface, e.g. monomeric components and repeat units)
-Contamination detection